Memorii Afox

Memorie DDR4 16GB 2666MHZ AFLD416FS1P Tip memorie DDR4 Capacitate 16GB Frecventa 2666 MHz Tensiune 1.20 V Latenta CL 19 MICRON CHIP memory module AFLD416FS1P

16GB (1x16GB) DDR4 3000MHz AFLD416LS1C Caracteristici Tip DDR4 Capacitate 16 GB Frecventa 3000 MHz Latenta 16 CL Iluminare Nu Recomandat pentru gaming Nu Alte informatii Standard PC4-24000 Radiator Nu Singl

AFLD22XM1P Modul unic Un singur cip de memorie RAM este o solutie care va fi perfecta pentru o configuratie conceputa pentru diverse sarcini. Oferta larga va va permite sa potriviti perfect modulul cu preferintele personale. Capacitatea mai mica va fi o solutie ieftina, care va fi utilizata in munca de birou. Pe de alta parte, jucatorii si utilizatorii de programe profesionale de proc

2GB DDR2 800MHz, CL15 AFLD22ZM1P 2GB Module - DDR2800MHz DDR2 800MHz, CL15, 1.8V, Unbuffered, Long DIMM, 240pin FEATURES JEDEC Standard DDR2 Speed Grade : 800 Mbps Unbuffered DIMM : 240-pin 16 internal banks; 4 groups of 4 banks each Memory Organization : x8 FBGA DRAM chip CAS latency : CL15 Bandwidth : PC2-6400 Data bus inversion (DBI) for data b

8GB DDR3 1333MHz, CL11 AFLD38BK1P 8GB Module - DDR3 1600 MHz DDR3 1333MHz, CL11, 1.5V, Unbuffered, Long DIMM, 240pin FEATURES 1. JEDEC Standard 2. DDR3 Speed Grade : 1600 Mbps 3. Unbuffered DIMM : 240-pin 4. Memory Organization : x8 FBGA DRAM chip 5. DDR3 DRAM interface : SSTL_15 6. CAS latency : CL11 7. Bandwidth : 10600MB/s 8. VDD voltage : 1.5+-0.075V 9. VDDQ voltage : 1.5+-0.075V

4GB DDR3 1600MHz, CL9 AFLD34BN1P 4GB Module - DDR3 1600 MHz DDR3 1600MHz, CL9, 1.5V, Unbuffered, Long DIMM, 240pin FEATURES 1. JEDEC Standard 2. DDR3 Speed Grade : 1600 Mbps 3. Unbuffered DIMM : 240-pin 4. Memory Organization : x8 FBGA DRAM chip 5. DDR3 DRAM interface : SSTL_15 6. CAS latency : CL9 7. Bandwidth : 10600MB/s 8. VDD voltage : 1.5+-0.075V 9. VDDQ voltage : 1.5+-0.075V 10.

8GB DDR3 1333MHz, CL11 AFLD38AK1P AFLD38AK1P 8GB Module - DDR3 1333MHz DDR3 1333MHz, CL11, 1.5V, Unbuffered, SO DIMM, 204pin FEATURES JEDEC Standard DDR3 Speed Grade : 1333 Mbps Unbuffered DIMM : 204-pin 16 internal banks; 4 groups of 4 banks each Memory Organization : x8 FBGA DRAM chip CAS latency : CL11 Bandwidth : 12800MB/s Data bus inversion (DBI